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Other articles related with "displacement damage"：
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76101 |
Yuan-Yuan Xue(薛院院), Zu-Jun Wang(王祖军), Wei Chen(陈伟), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Bao-Ping He(何宝平), Xu Nie(聂栩), Shankun Lai(赖善坤), Gang Huang(黄港), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), and Shi-Long Gou(缑石龙) |
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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source |
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Chin. Phys. B
2023 Vol.32 (7): 76101-076101
[Abstract]
(121)
[HTML 0 KB]
[PDF 2269 KB]
(75)
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14210 |
Rui Xu(徐瑞), Zu-Jun Wang(王祖军), Yuan-Yuan Xue(薛院院), Hao Ning(宁浩), Min-Bo Liu(刘敏波), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), Guan-Tao Dong(董观涛) |
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Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source |
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Chin. Phys. B
2020 Vol.29 (1): 14210-014210
[Abstract]
(566)
[HTML 1 KB]
[PDF 1272 KB]
(102)
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67302 |
Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院) |
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Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons |
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Chin. Phys. B
2019 Vol.28 (6): 67302-067302
[Abstract]
(616)
[HTML 1 KB]
[PDF 1403 KB]
(134)
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38501 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利) |
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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation |
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Chin. Phys. B
2018 Vol.27 (3): 38501-038501
[Abstract]
(623)
[HTML 0 KB]
[PDF 2130 KB]
(319)
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18501 |
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯) |
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Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM |
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Chin. Phys. B
2017 Vol.26 (1): 18501-018501
[Abstract]
(828)
[HTML 1 KB]
[PDF 310 KB]
(436)
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116104 |
Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘) |
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 116104-116104
[Abstract]
(628)
[HTML 1 KB]
[PDF 672 KB]
(405)
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104211 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群) |
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Incident particle range dependence of radiation damage in a power bipolar junction transistor |
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Chin. Phys. B
2012 Vol.21 (10): 104211-104211
[Abstract]
(1044)
[HTML 1 KB]
[PDF 503 KB]
(627)
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80703 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ) |
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Effect of bias condition on heavy ion radiation in bipolar junction transistor |
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Chin. Phys. B
2012 Vol.21 (8): 80703-080703
[Abstract]
(1484)
[HTML 1 KB]
[PDF 171 KB]
(702)
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66103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
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Degradation mechanisms of current gain in NPN transistors |
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Chin. Phys. B
2010 Vol.19 (6): 66103-066103
[Abstract]
(1536)
[HTML 1 KB]
[PDF 268 KB]
(1911)
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56103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
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Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons |
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Chin. Phys. B
2010 Vol.19 (5): 56103-056103
[Abstract]
(1211)
[HTML 1 KB]
[PDF 2089 KB]
(1093)
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117307 |
Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴) |
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Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation |
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Chin. Phys. B
2010 Vol.19 (11): 117307-117307
[Abstract]
(1647)
[HTML 1 KB]
[PDF 2091 KB]
(996)
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5015 |
Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖) |
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Effects of electron radiation on shielded space and triple-junction GaAs solar cells |
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Chin. Phys. B
2009 Vol.18 (11): 5015-5019
[Abstract]
(1539)
[HTML 1 KB]
[PDF 520 KB]
(828)
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